Electronic Materials
last updated 2026-06-02 · +1 sources in last 30d
Frontier
- Which wide-bandgap semiconductor (GaN, Ga₂O₃, diamond) wins in power electronics above 1.2 kV over the next decade?
- Can ALD dielectrics maintain sub-1 nm EOT at gate leakage limits for 2 nm node and below?
- What is the scalable supply path for low-defect-density gallium oxide substrates for power devices?
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- 2026-06-22 TIM approaches — exhaustive in-market + R&D sweep (vendors, classes, startups) web
Frontier questions
- Which wide-bandgap semiconductor (GaN, Ga2O3, diamond) wins in power electronics above 1.2 kV over the next decade?
- Can atomic-layer-deposition dielectrics maintain sub-1nm EOT at gate leakage limits for 2nm-node and below?
- What is the scalable supply path for low-defect-density gallium oxide substrates for power devices?